PART |
Description |
Maker |
HMC838LP6CE |
FRACTIONAL-N SYNTHESIZER WITH INTEGRATED VCO 795 - 945, 1590 - 1890, 3180 - 3780 MHz
|
Hittite Microwave Corporation
|
MRF19045LSR3 MRF19045LR3 |
1990 MHz, 45 W, 26 V Lateral N-Channel RF Power MOSFET RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS
|
Freescale (Motorola) MOTOROLA[Motorola, Inc] Motorola, Inc.
|
MRF5S21130SR3 MRF5S21130 MRF5S21130R3 MRF5S21130S |
MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 MHz, 28 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
AGR09045E AGR09045EF AGR09045EU |
45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
AGR09070EF |
70 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
PD21120R6 |
120 Watts, 2110-2170 MHz PD21120R6 PUSH/PULL LATERAL MOSFET 120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET
|
TRIQUINT SEMICONDUCTOR INC
|
MRF5P21240R6 MRF5P21240 |
RF POWER FIELD EFFECT TRANSISTOR 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET 2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] Freescale (Motorola)
|
MRF9180R6 |
880 MHz, 170 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
MRF377MRF377R3MRF377R5 |
470–860 MHz, 240 W, 32 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
MRF5P21240 |
2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel Broadband RF Power MOSFET
|
Motorola
|
|